eBook: Bands and Photons in III-V Semiconductor Quantum Structures (DRM PDF)
 
電子書格式: DRM PDF
作者: Igor Vurgaftman, Matthew P. Lumb, Jerry R. Meyer 
系列: Series on Semiconductor Science and Technology
分類: Materials / States of matter ,
Condensed matter physics (liquid state & solid state physics) ,
Semi-conductors & super-conductors  
書城編號: 20200668


售價: $867.00

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製造商: OUP Oxford
出版日期: 2020/11/22
頁數: 400
ISBN: 9780191080050
 
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商品簡介
Semiconductor quantum structures are at the core of many photonic devices such as lasers, photodetectors, solar cells etc. To appreciate why they are such a good fit to these devices, we must understand the basic features of their band structure and how they interact with incident light. Many books have taken on this task in the past, but their treatments tend either to pluck results from the literature and present them as received truths or to rely onunrealistically simple models. Bands and Photons in III-V Semiconductor Quantum Structures takes the reader from the very basics of III-V semiconductors (some preparation in quantum mechanics and electromagnetism is helpful) and shows how seemingly obscure results such as detailed forms of the Hamiltonian, optical transition strengths, and recombination mechanisms follow. The reader would not need to consult other references to fully understand the material, although a few handpicked sources are listed for those whowould like to deepen their knowledge further. Connections to the properties of novel materials such as graphene and transition metal dichalcogenides are pointed out, to help prepare the reader for contributing at the forefront of research in those fields. The book also supplies a complete, up-to-date database of the band parameters that enter into the calculations, along with tables of optical constants and interpolation schemes for alloys. From these foundations, the book goes on to derive the characteristics of photonic semiconductor devices (with a focus on the mid-infrared) using the same principles of building all concepts from the ground up, explaining all derivations in detail, giving quantitative examples, and laying out dimensionalarguments whenever they can help the reader's understanding.
Series on Semiconductor Science and Technology

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